Browsing by Author "Naranjo Vega, Fernando Bernabé"
Now showing items 41-49 of 49
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Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering
Núñez Cascajero, Arántzazu; Valdueza Felip, Sirona; Blasco Chicano, Rodrigo; Mata Fernández, María de la; Molina Rubio, Sergio Ignacio; [et al.] (2018-11-15) -
Study of Absorption Saturation in InN Thin Films through the Z-Scan Technique at 1.55 μm
Jiménez Rodríguez, Marco; Monroy Lafuente, Laura; Núñez Cascajero, Arántzazu; Monroy, Eva; González Herráez, Miguel; [et al.] (2018-07) -
Study of high In-content AlInN deposition on p-Si (111) by RF-sputtering
Núñez Cascajero, Arántzazu; Monteagudo Lerma, Laura; Valdueza Felip, Sirona; Navío, C.; Monroy, Eva; [et al.] (2016-05) -
Sub-250 fs, 650 kW Peak Power Harmonic Mode-Locked Fiber Laser with InN-based SESAM
Gallazzi, F.; Jiménez Rodríguez, Marco; Monroy, Eva; Corredera, Pedro; González Herráez, Miguel; [et al.] (2018-04-26) -
Third order nonlinear susceptibility of InN at near band-gap wavelengths
Naranjo Vega, Fernando Bernabé; González Herráez, Miguel; Fernández, H.; Solis, J.; Monroy, Eva (2007) -
Two-step method for the deposition of AlN by radio frequency sputtering
Monteagudo Lerma, Laura; Valdueza Felip, Sirona; González Herráez, Miguel; Monroy, Eva; Núñez Cascajero, Arántzazu; [et al.] (2013-07-31) -
Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs
Monteagudo Lerma, Laura; Valdueza Felip, Sirona; Naranjo Vega, Fernando Bernabé; Corredera, Pedro; Rapenne, L.; [et al.] (2013-11) -
Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber
Jiménez Rodríguez, Marco; Monteagudo Lerma, Laura; Monroy, Eva; González Herráez, Miguel; Naranjo Vega, Fernando Bernabé (2017-03-06) -
Z-scan characterization of InN layers at telecom wavelengths
Monroy Lafuente, Laura; Jiménez Rodríguez, Marco; Monroy, Eva; González Herráez, Miguel; Naranjo Vega, Fernando Bernabé (2018-07-04)