Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs
Authors
Monteagudo Lerma, LauraPublisher
Optical Society of America
Date
2013-11Funders
Ministerio de Economía y Competitividad
Comunidad de Madrid
Bibliographic citation
L. Monteagudo-Lerma, S. Valdueza-Felip, F. B. Naranjo, P. Corredera, L. Rapenne, E. Sarigiannidou, G. Strasser, E. Monroy, and M. González-Herráez, "Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs," Optics Express, 2013, v. 21, n.23, pp. 27578-27586.
Project
info:eu-repo/grantAgreement/CAM//S2009%2FESP1781/ES//FACTOTEM2
info:eu-repo/grantAgreement/MINECO//TEC2012-37958-C02-01/ES/TECNOLOGIAS DE SEGURIDAD CIVIL BASADAS EN FIBRA OPTICA/
Document type
info:eu-repo/semantics/article
Version
info:eu-repo/semantics/publishedVersion
Access rights
info:eu-repo/semantics/openAccess
Abstract
We report on the design, fabrication and optical characterization of GaN/AlN quantum-dot-based waveguides for all-optical switching via intraband absorption saturation at 1.55 µm. The transmittance of the TM-polarized light increases with the incident optical power due to the saturation of the s-pz intraband absorption in the QDs. Single-mode waveguides with a ridge width of 2 µm and a length of 1.5 mm display 10 dB absorption saturation of the TM-polarized light for an input pulse energy of 8 pJ and 150 fs.
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Files | Size | Format |
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Waveguide saturable absorbers ... | 1.650Mb |
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