High-quality, InN-based, saturable absorbers for ultrafast laser development
Authors
Monroy Lafuente, Laura; Jiménez Rodríguez, Marco; Monroy, Eva; González Herráez, Miguel; Naranjo Vega, Fernando BernabéIdentifiers
Permanent link (URI): http://hdl.handle.net/10017/60478DOI: 10.3390/app10217832
ISSN: 2076-3417
Publisher
MDPI
Date
2020-11-03Funders
Comunidad de Madrid
Agencia Estatal de Investigación
Ministerio de Economía y Competitividad
Bibliographic citation
Monroy Lafuente, L., Jiménez Rodríguez, M., Monroy, E., González Herráez, M. & Naranjo Vega, F.B. 2020, "High-quality, InN-based, saturable absorbers for ultrafast laser development", Applied Sciences, vol. 10, no. 21, art. no. 7832, pp. 1-11.
Keywords
Saturable absorbers
Nonlinear effects
Material defects
Project
info:eu-repo/grantAgreement/CAM//S2018%2FNMT4326/ES/SENSORES E INSTRUMENTACION EN TECNOLOGIAS FOTONICAS2/SINFOTON2
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RTI2018-097957-B-C31/ES/INGENIERIA DE SEÑALES OPTICAS COMPLEJAS PARA SISTEMAS DE FIBRA OPTICA MAS ALLA DE LA TELECOMUNICACION/
info:eu-repo/grantAgreement/MINECO//TEC2015-71127-C2-2-R/ES/REDUCCION DE LOS EFECTOS DE RUIDO EN SISTEMAS DE FIBRA OPTICA NO LINEALES/
Document type
info:eu-repo/semantics/article
Version
info:eu-repo/semantics/publishedVersion
Publisher's version
https://doi.org/10.3390/app10217832Rights
Attribution-NonCommercial-NoDerivatives 4.0 Internacional
© 2020 The authors
Access rights
info:eu-repo/semantics/openAccess
Abstract
New fabrication methods are strongly demanded for the development of thin‐film saturable absorbers with improved optical properties (absorption band, modulation depth, nonlinear optical response). In this sense, we investigate the performance of indium nitride (InN) epitaxial layers with low residual carrier concentration (<1018 cm−3), which results in improved performance at telecom wavelengths (1560 nm). These materials have demonstrated a huge modulation depth of 23% and a saturation fluence of 830 μJ/cm2, and a large saturable absorption around −3 × 104 cm/GW has been observed, attaining an enhanced, nonlinear change in transmittance. We have studied the use of such InN layers as semiconductor saturable absorber mirrors (SESAMs) for an erbium (Er)‐doped fiber laser to perform mode‐locking generation at 1560 nm. We demonstrate highly stable, ultrashort (134 fs) pulses with an energy of up to 5.6 nJ.
Files in this item
Files | Size | Format |
|
---|---|---|---|
High-quality_Monroy_Appl_Sci_2 ... | 1.319Mb |
|
Files | Size | Format |
|
---|---|---|---|
High-quality_Monroy_Appl_Sci_2 ... | 1.319Mb |
|
Collections
- ELECTRON - Artículos [245]