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dc.contributor.authorMonteagudo Lerma, Laura 
dc.contributor.authorValdueza Felip, Sirona 
dc.contributor.authorNúñez Cascajero, Arántzazu 
dc.contributor.authorRuiz, A.
dc.contributor.authorGonzález Herráez, Miguel 
dc.contributor.authorMonroy, Eva
dc.contributor.authorNaranjo Vega, Fernando Bernabé 
dc.date.accessioned2018-02-13T14:46:06Z
dc.date.available2018-02-13T14:46:06Z
dc.date.issued2016-01-16
dc.identifier.bibliographicCitationMonteagudo-Lerma, L., Valdueza-Felip, S., Núñez-Cascajero, A., Ruiz, A., González-Herráez, M., Monroy, E., Naranjo, F.B. "Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer", (2016) Journal of Crystal Growth, 434, pp. 13-18.en
dc.identifier.issn0022-0248
dc.identifier.urihttp://hdl.handle.net/10017/32153
dc.description.abstractWe present the structural and optical properties of (0001)-oriented nanocolumnar films of InN deposited on c-sapphire substrates by radio-frequency reactive sputtering. It is observed that the column density and dimensions are highly dependent on the growth parameters of the buffer layer. We investigate four buffer layers consisting of (i) 30 nm of low-growth-rate InN, (ii) 30 nm of AlN deposited on the unbiased substrate (us), (iii) 30 nm of AlN deposited on the reverse-biased substrate (bs), and (iv) a 60-nm-thick bilayer consisting of 30-nm-thick bs-AlN deposited on top of 30-nm-thick us-AlN. Differences in the layer nucleation process due to the buffer layer induce variations of the column density in the range of (2.5-16)×109 cm-2, and of the column diameter in the range of 87-176 nm. Best results in terms of mosaicity are obtained using the bs-AlN buffer layer, which leads to a full width at half-maximum of the InN(0002) rocking curve of 1.2°. A residual compressive strain is still present in the nanocolumns. All samples exhibit room temperature photoluminescence emission at ∼1.6 eV, and an apparent optical band gap at ∼1.7 eV estimated from linear optical transmittance measurements.en
dc.description.sponsorshipMinisterio de Economía y Competitividades_ES
dc.description.sponsorshipComunidad de Madrides_ES
dc.description.sponsorshipUniversidad de Alcaláes_ES
dc.description.sponsorshipEuropean Commissionen
dc.format.mimetypeapplication/pdfen
dc.language.isoengen
dc.publisherElsevier
dc.rightsAttribution-NonCommercial-NoDerivates 4.0 International (CC BY-NC-ND 4.0)*
dc.rights(c) Elsevier, 2016
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectAtomic force microscopyen
dc.subjectNanostructuresen
dc.subjectX-ray diffractionen
dc.subjectSputteringen
dc.subjectSemiconducting indium nitrideen
dc.titleMorphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layeren
dc.typeinfo:eu-repo/semantics/articleen
dc.subject.ecienciaCIENCIAS TECNOLÓGICASes_ES
dc.subject.ecienciaElectrónicaes_ES
dc.subject.ecienciaTECHNOLOGYen
dc.subject.ecienciaElectronicsen
dc.contributor.affiliationUniversidad de Alcalá. Departamento de Electrónicaes_ES
dc.relation.publisherversionhttps://doi.org/10.1016/j.jcrysgro.2015.10.016
dc.type.versioninfo:eu-repo/semantics/acceptedVersionen
dc.identifier.doi10.1016/j.jcrysgro.2015.10.016
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/FP7/331745/EU/Solar cells based on InGaN nanostructures on silicon/Solarinen
dc.relation.projectIDinfo:eu-repo/grantAgreement/MINECO//TEC2012-37958-C02-01/ES/TECNOLOGIAS DE SEGURIDAD CIVIL BASADAS EN FIBRA OPTICA/en
dc.relation.projectIDinfo:eu-repo/grantAgreement/UAH//CCG2014%2FEXP-051en
dc.relation.projectIDinfo:eu-repo/grantAgreement/Comunidad de Madrid//S2009%2FMIT2790/ES/Sensores e INstrumentación en tecnologías FOTÓNicas/SINFOTONen
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessen
dc.identifier.publicationtitleJournal of Crystal Growthen
dc.identifier.publicationvolume434
dc.identifier.publicationlastpage18
dc.identifier.publicationfirstpage13


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