RT info:eu-repo/semantics/preprint
T1 Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen
A1 Monteagudo Lerma, Laura
A1 Naranjo Vega, Fernando Bernabé
A1 González Herráez, Miguel
A1 Fernández, S.
K1 Nitrides
K1 RF reactive sputtering
K1 Semiconductor III-V materials
K1 X-ray diffraction
K1 Ciencias tecnológicas
K1 Electrónica
K1 Technology
K1 Electronics
AB We report on the investigation of the influence of deposition conditions on structural, morphological and optical properties of AlN thin films deposited on sapphire (Al 2O 3) substrates by radio-frequency (RF) reactive sputtering. The deposition parameters studied are RF power, substrate temperature and substrate bias, while using pure nitrogen as reactive gas. The effect of such deposition parameters on AlN film properties are analyzed by different characterization methods as high resolution X-ray diffraction (HRXRD), field emission scanning electron microscopy (FESEM) and linear optical transmission. AlN thin films with a full-width at half-maximum (FWHM) of the rocking curve obtained for the (0002) diffraction peak of 1.2 o are achieved under optimized conditions. The time resolved evolution of the self and externally-induced biasing of the substrate during deposition process is monitored and analyzed in terms of the rate of atomic species incorporation into the layer. The bias-induced change of the atomic incorporation leads to an enhancement in the structural quality of the layer and an increase of the deposition rate.
PB Wiley Online Library
SN 1862-6351
YR 2012
FD 2012-03-22
LK http://hdl.handle.net/10017/32149
UL http://hdl.handle.net/10017/32149
LA eng
NO Ministerio de Ciencia e Innovación
DS MINDS@UW
RD 01-may-2024