High-order input-reflectionless quasi-elliptic-type wideband bandpass filter using dual-mode slotline resonator
Identificadores
Enlace permanente (URI): http://hdl.handle.net/10017/55322DOI: 10.23919/APMC55665.2022.9999911
ISBN: 978-4-902339-56-7
Editor
IEEE
Fecha de publicación
2023-01-09Patrocinadores
European Commission
Agencia Estatal de Investigación
Cita bibliográfica
Yang, L., Psychogiou, D. & Gómez García, R. 2022, "High-order input-reflectionless quasi-elliptic-type wideband bandpass filter using dual-mode slotline resonator", in 2022 Asia-Pacific Microwave Conference (APMC), Yokohama, Japan, 2022, pp. 455-457.
Palabras clave
Absorptive filter
Bandpass filter (BPF)
Two-layer structure
Reflectionles filter
Wideband filter
Descripción
2022 Asia-Pacific Microwave Conference (APMC), 29 November to 02 December 2022, Yokohama, Japan.
Proyectos
info:eu-repo/grantAgreement/EC/H2020/754382/EU/GOT Energy Talent/GET
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-116983RB-I00/ES/NEW-GENERATION MICROWAVE PASSIVE COMPONENTS FOR ADVANCED WIRELESS-COMMUNICATIONS%2FRF-SENSING PLATFORMS/
Tipo de documento
info:eu-repo/semantics/conferenceObject
Versión
info:eu-repo/semantics/acceptedVersion
Versión del editor
https://doi.org/10.23919/APMC55665.2022.9999911Derechos
Attribution-NonCommercial-NoDerivatives 4.0 Internacional
© 2022 IEEE
Derechos de acceso
info:eu-repo/semantics/openAccess
Resumen
A high-order input-reflectionless quasi-elliptic-type wideband bandpass filter (BPF) that exploits a complementary-diplexer-based topology is reported. Firstly, a fourth-order wideband microstrip-to-microstrip vertical transition employing a dual-mode slotline resonator as the reflective-type BPF channel is designed. It features a sharp-rejection BPF response with two close-to-passband transmission zeros (TZs). To attain broadband input-reflectionless behavior, a shunt resistively-terminated microstrip π-shape network is used as the absorptive bandstop-filter (BSF) channel. The RF theoretical operational principle of the conceived broadband BPF is detailed. Compared to prior-art high-order input-/two-port-reflectionless wideband BPFs, the proposed BPF features not only improved passband flatness at the passband edges, but also relatively-high stopband power-attenuation levels and power-absorption ratios. For experimental-validation purposes, a two-layer fourth-order BPF microstrip prototype centered at 1 GHz is developed and tested.
Ficheros en el ítem
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