In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers
Autores
Núñez Cascajero, Arántzazu; Valdueza Felip, Sirona; Monteagudo Lerma, Laura; Monroy, Eva; Taylor-Shaw, E.; [et al.]Identificadores
Enlace permanente (URI): http://hdl.handle.net/10017/29260DOI: 10.1088/1361-6463/aa53d5
ISSN: 0022-3727
Editor
IOP
Fecha de publicación
2017-01-11Fecha fin de embargo
2017-07-11Patrocinadores
European Commission
Ministerio de Economía y Competitividad
Comunidad de Madrid
Universidad de Alcalá
Cita bibliográfica
Núñez-Cascajero, A., Valdueza-Felip, S., Monteagudo-Lerma, L., Monroy, E., Taylor-Shaw, E., Martin, R.W., González-Herráez, M., Naranjo, F.B., 2017, "In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers", Journal of Physics D: Applied Physics, 50 (6), art. no. 065101.
Palabras clave
AlInN
Characterization
III-nitrides
RF-sputtering
Semiconductor
Proyectos
info:eu-repo/grantAgreement/MINECO//TEC2015-71127-C2-2-R/ES/REDUCCION DE LOS EFECTOS DE RUIDO EN SISTEMAS DE FIBRA OPTICA NO LINEALES/
info:eu-repo/grantAgreement/CAM//S2009%2FMIT2790/ES/Sensores e INstrumentación en tecnologías FOTÓNicas/SINFOTON
info:eu-repo/grantAgreement/UAH//CCG2015%2FEXP-014
info:eu-repo/grantAgreement/EC/FP7/331745/EU/Solar cells based on InGaN nanostructures on silicon/Solarin
Tipo de documento
info:eu-repo/semantics/article
Versión
info:eu-repo/semantics/acceptedVersion
Versión del editor
http://dx.doi.org/10.1088/1361-6463/aa53d5Derechos
Atribución-NoComercial-SinDerivadas 3.0 Español
Derechos de acceso
info:eu-repo/semantics/openAccess
Resumen
The structural, morphological, electrical and optical properties of In-rich AlxIn1-xN (0 < x < 0.39) layers grown by reactive radio-frequency (RF) sputtering on sapphire are investigated as a function of the deposition parameters. The RF power applied to the aluminum target (0 W-150 W) and substrate temperature (300 °C-550 °C) are varied. X-ray diffraction measurements reveal that all samples have a wurtzite crystallographic structure oriented with the c-axis along the growth direction. The aluminum composition is tuned by changing the power applied to the aluminum target while keeping the power applied to the indium target fixed at 40 W. When increasing the Al content from 0 to 0.39, the room-temperature optical band gap is observed to blue-shift from 1.76 eV to 2.0 eV, strongly influenced by the Burstein-Moss effect. Increasing the substrate temperature, results in an evolution of the morphology from closely-packed columnar to compact. For a substrate temperature of 500 °C and RF power for Al of 150 W, compact Al0.39In0.61N films with a smooth surface (root-mean-square surface roughness below 1 nm) are produced.
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in-rich AlxIn1_J_Phys_D_Appl_p ... | 1.840Mb |
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