Non-linear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths
Autores
Naranjo Vega, Fernando Bernabé; Kandaswamy, P.K; Valdueza Felip, Sirona; Calvo, V.; González Herráez, Miguel; [et al.]Editor
American Institute of Physics
Fecha de publicación
2011Patrocinadores
Ministerio de Ciencia e Innovación
Comunidad de Madrid
Cita bibliográfica
Naranjo, F.B., Kandaswamy, P.K, Valdueza Felip, S., Calvo, V., González-Herráez, M., Martín-López, S., Corredera, P., Méndez, J.A., Mutta, G.R., Lacroix, B., Monroy, E., "Non-linear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths", Applied Physics Letters, 2011, Vol. 98, n.3
Proyectos
info:eu-repo/grantAgreement/MICINN//TEC2009-14423-C02-02/ES/Aplicacion Del Laser Femtocomb Al Estudio De Estructuras Semiconductoras Para Comunicaciones Opticas/
info:eu-repo/grantAgreement/CAM//S2009%2FESP1781/ES//FACTOTEM2
Tipo de documento
info:eu-repo/semantics/article
Versión
info:eu-repo/semantics/acceptedVersion
Versión del editor
http.//dx.doi.org/10.1063/1.3535609Derechos de acceso
info:eu-repo/semantics/openAccess
Resumen
We report on the nonlinear optical absorption of InN/ InxGa1−xN x=0.8, 0.9
multiple-quantum-well structures characterized at 1.55 m by the Z-scan method in order to obtain
the effective nonlinear absorption coefficient 2 of the samples at high repetition rate. Saturable
absorption is observed for the sample with x=0.9, with an effective 2 −9 103 cm/GW for the
studied optical regime. For lower In content in the barrier, reverse saturable absorption is observed,
which is attributed to two-photon absorption.
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