%0 Journal Article 
%A Núñez Cascajero, Arántzazu
%A Jiménez Rodríguez, Marco
%A Monroy, Eva
%A González Herráez, Miguel
%A Naranjo Vega, Fernando Bernabé
%T Development of AlInN photoconductors deposited by sputtering
%D 2017
%@ 1862-6319
%U http://hdl.handle.net/10017/29266
%X In this work, we have developed photoconductor devices based on Al0.39In0.61N layers grown on sapphire by reac-tive radio-frequency magnetron sputtering. The fabricat-ed devices show a sublinear dependence of the photocur-rent as a function of the incident optical power. The above-the-band-gap responsivity reaches 7 W/A for an ir-radiance of 10 W/m2 (405 nm wavelength). The response decreases smoothly for below-the-bandgap excitation, dropping by more than an order of magnitude at 633 nm. The devices present persistent photoconductivity effects associated to carrier trapping at grain boundaries.
%K AlInN
%K III-nitride semiconductors
%K Photoconductors
%K Sputtering
%K Electrónica
%K Electronics
%~ Biblioteca Universidad de Alcala