RT info:eu-repo/semantics/article
T1 Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 1.55µm
A1 Monroy Lafuente, Laura
A1 Jiménez Rodríguez, Marco
A1 Ruterana, Pierre
A1 Monroy, Eva
A1 González Herráez, Miguel
A1 Naranjo Vega, Fernando Bernabé
K1 Electrónica
K1 Electronics
AB We report on the improvement of performance of InN-based saturable absorbers in fiber lasers operating at 1.55 mum by reducing the residual doping, due to the lower Burstein-Moss effect. The improved tuning of the band-to-band transition with respect to the operation wavelength leads to an enhancement of nonlinear optical effects, resulting in 30 % of modulation depth. We introduce the development of an ultrafast mode-locked fiber laser using an improved InN-based saturable absorber that incorporates a buffer layer between the active layer and the substrate. The laser delivers output pulses with a temporal width of   220 fs, a repetition rate of 5.25 MHz, and high-pulse energy of 5.8 nJ.
PB 
YR 2019
FD 2019-07-01
LK http://hdl.handle.net/10017/38450
UL http://hdl.handle.net/10017/38450
LA eng
NO Ministerio de Economía, Industria y Competitividad
DS MINDS@UW
RD 24-abr-2024