RT info:eu-repo/semantics/article
T1 InN-based optical waveguides developed by RF sputtering for all-optical applications at 1.55 μm
A1 Monteagudo Lerma, Laura
A1 Naranjo Vega, Fernando Bernabé
A1 Jiménez Rodríguez, Marco
A1 Postigo, P.A.
A1 Barrios, E.
A1 Corredera, Pedro
A1 González Herráez, Miguel
K1 Active waveguides
K1 All-optical devices
K1 Indium nitride
K1 Nonlinear optics
K1 Sputtering
K1 Ciencias tecnológicas
K1 Electrónica
K1 Technology
K1 Electronics
AB We report on the design, fabrication, and optical characterization of InN-based optical waveguides aiming at their application as all-optical limiters at 1.55 $\mu \text{m}$. The InN guiding layers are grown by radio frequency (RF) sputtering on sapphire substrates. Experimental cutback method and nonlinear optical transmittance measurements were performed for the developed devices. The waveguides present nonlinear behavior associated with two photon absorption process. A nonlinear absorption coefficient ranging from $\sim 43$ to 114 cm/GW is estimated from optical measurements. These results open the possibility of using RF sputtering as a low cost and thermally harmless technique for the development and overgrowth of InN-based optical waveguides in future III-nitride all-optical integrated circuits working at telecom wavelengths
PB IEEE
SN 1041-1135
YR 2015
FD 2015-09-01
LK http://hdl.handle.net/10017/32165
UL http://hdl.handle.net/10017/32165
LA eng
NO Ministerio de Economía y Competitividad
DS MINDS@UW
RD 25-abr-2024