RT info:eu-repo/semantics/preprint
T1 Development of AlInN photoconductors deposited by sputtering
A1 Núñez Cascajero, Arántzazu
A1 Jiménez Rodríguez, Marco
A1 Monroy, Eva
A1 González Herráez, Miguel
A1 Naranjo Vega, Fernando Bernabé
K1 AlInN
K1 III-nitride semiconductors
K1 Photoconductors
K1 Sputtering
K1 Electrónica
K1 Electronics
AB In this work, we have developed photoconductor devices based on Al0.39In0.61N layers grown on sapphire by reac-tive radio-frequency magnetron sputtering. The fabricat-ed devices show a sublinear dependence of the photocur-rent as a function of the incident optical power. The above-the-band-gap responsivity reaches 7 W/A for an ir-radiance of 10 W/m2 (405 nm wavelength). The response decreases smoothly for below-the-bandgap excitation, dropping by more than an order of magnitude at 633 nm. The devices present persistent photoconductivity effects associated to carrier trapping at grain boundaries.
PB Wiley
SN 1862-6319
YR 2017
FD 2017-01-10
LK http://hdl.handle.net/10017/29266
UL http://hdl.handle.net/10017/29266
LA eng
NO Ministerio de Economía y Competitividad
DS MINDS@UW
RD 25-abr-2024