RT info:eu-repo/semantics/article
T1 In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers
A1 Núñez Cascajero, Arántzazu
A1 Valdueza Felip, Sirona
A1 Monteagudo Lerma, Laura
A1 Monroy, Eva
A1 Taylor-Shaw, E.
A1 Martin, R.W.
A1 González Herráez, Miguel
A1 Naranjo Vega, Fernando Bernabé
K1 AlInN
K1 Characterization
K1 III-nitrides
K1 RF-sputtering
K1 Semiconductor
K1 Ciencias tecnológicas
K1 Electrónica
K1 Technology
K1 Electronics
AB The structural, morphological, electrical and optical properties of In-rich AlxIn1-xN (0 < x < 0.39) layers grown by reactive radio-frequency (RF) sputtering on sapphire are investigated as a function of the deposition parameters. The RF power applied to the aluminum target (0 W-150 W) and substrate temperature (300 °C-550 °C) are varied. X-ray diffraction measurements reveal that all samples have a wurtzite crystallographic structure oriented with the c-axis along the growth direction. The aluminum composition is tuned by changing the power applied to the aluminum target while keeping the power applied to the indium target fixed at 40 W. When increasing the Al content from 0 to 0.39, the room-temperature optical band gap is observed to blue-shift from 1.76 eV to 2.0 eV, strongly influenced by the Burstein-Moss effect. Increasing the substrate temperature, results in an evolution of the morphology from closely-packed columnar to compact. For a substrate temperature of 500 °C and RF power for Al of 150 W, compact Al0.39In0.61N films with a smooth surface (root-mean-square surface roughness below 1 nm) are produced.
PB IOP
SN 0022-3727
YR 2017
FD 2017-01-11
LK http://hdl.handle.net/10017/29260
UL http://hdl.handle.net/10017/29260
LA eng
NO European Commission
DS MINDS@UW
RD 25-abr-2024