RT info:eu-repo/semantics/article
T1 Non linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 μm
A1 Naranjo Vega, Fernando Bernabé
A1 González Herráez, Miguel
A1 Valdueza Felip, Sirona
A1 Fernández, H.
A1 Solis, J.
A1 Fernández, S.
A1 Monroy, Eva
A1 Grandal, J.
A1 Sánchez García, Miguel Ángel
K1 Four wave mixing
K1 InN
K1 Non-linear optics
K1 Slow light
K1 Electrónica
K1 Electronics
AB Future bandwidth demand in optical communications requires all-optical devices based on optical non-linear behavior of materials. InN, with a room temperature direct bandgap well below 0.82 eV (1.5 μm) is very attractive for these applications. In this work, we characterize the non-linear optical response and recombination lifetime of the interband transition of InN layers grown on GaN template and Si(1 1 1) by molecular beam epitaxy. Non-linear characterization shows a decrease of the third-order susceptibility, χ(3), and an increase of recombination lifetime when decreasing the energy difference between the excitation and the apparent optical band-gap energy of the analysed samples. Taking into account the non-linear characterization, an optically controlled reduction of the speed of light by a factor S=4.2 is obtained for bulk InN at 1.5 μm. The S factor of InN (5 nm)/In0.7Ga0.3N (8 nm) multiple quantum well heterostructures at the same operation wavelength is analysed, predicting an increase of this factor of three orders of magnitude. This result would open the possibility of using InN-based heterostructures for all-optical devices applications. © 2008 Elsevier Ltd. All rights reserved.
PB Elsevier
SN 00262692
YR 2009
FD 2009-02-02
LK http://hdl.handle.net/10017/28158
UL http://hdl.handle.net/10017/28158
LA eng
NO Ministerio de Educación y Ciencia
DS MINDS@UW
RD 17-abr-2024