RT info:eu-repo/semantics/article
T1 Infrared SPR sensing with III-nitride dielectric layers
A1 Núñez Cascajero, Arántzazu
A1 Esteban Martinez, Óscar
A1 Méndez, J.A.
A1 González Herráez, Miguel
A1 Naranjo Vega, Fernando Bernabé
K1 III-Nitride
K1 Sputtering
K1 Surface plasmon resonance
K1 Tapered optical fiber
K1 Ciencias tecnológicas
K1 Electrónica
K1 Technology
K1 Electronics
AB In this work, Aluminum Indium Nitride (AlxIn1-xN) has been used as the dielectric overlay for a surface plasmon resonance sensor. The use of a ternary compound such as AlxIn1-xN for the dielectric allows a fine tuning of its refractive index by varying its composition, thus improving the sensor performance. Narrower transmittance resonances and higher sensitivities are obtained for transducers where the substrate rotates while depositing the ternary compound, which is attributed to the deposition of ternary layers with enhanced homogeneity. The calculated average sensitivity of the devices increases when rising the Al content of the dielectric layer, it being of 4360 nm/RIU, 5230 nm/RIU and 5730 nm/RIU for 0%, 36% and 100%, respectively. The device grown with 36% of Al shows the highest coupling strength. These results show the suitability of AlxIn1-xN compounds as dielectric layers in SPR sensors.
PB Elsevier
SN 0925-4005
YR 2016
FD 2016-02
LK http://hdl.handle.net/10017/26437
UL http://hdl.handle.net/10017/26437
LA eng
NO Ministerio de Economía y Competitividad
DS MINDS@UW
RD 19-abr-2024