RT info:eu-repo/semantics/article
T1 Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells
A1 Valdueza Felip, Sirona
A1 Rigutti, Lorenzo
A1 Naranjo Vega, Fernando Bernabé
A1 Lacroix, Bertrand
A1 Fernández, S.
A1 Ruterana, Pierre
A1 Julien, François H.
A1 González Herráez, Miguel
A1 Monroy, Eva
K1 Heterostructures
K1 Molecular beam epitaxy
K1 Nitrides
K1 Photoluminescence
K1 Ciencias tecnológicas
K1 Electrónica
K1 Technology
K1 Electronics
AB We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In0.9Ga0.1N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-µm-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at ∼0.73 eV with a full width at half maximum of ∼86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature, explained in terms of carrier localization. A carrier localization energy of ∼12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of ∼16%.
PB WILEY-VCH Verlag
YR 2012
FD 2012-01
LK http://hdl.handle.net/10017/25058
UL http://hdl.handle.net/10017/25058
LA eng
NO Ministerio de Ciencia e Innovación
DS MINDS@UW
RD 25-abr-2024