RT info:eu-repo/semantics/article T1 Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs A1 Monteagudo Lerma, Laura A1 Valdueza Felip, Sirona A1 Naranjo Vega, Fernando Bernabé A1 Corredera, Pedro A1 Rapenne, L. A1 Sarigiannidou, E. A1 Strasser, G. A1 Monroy, Eva A1 González Herráez, Miguel K1 Ciencias tecnológicas K1 Electrónica K1 Technology K1 Electronics AB We report on the design, fabrication and optical characterization of GaN/AlN quantum-dot-based waveguides for all-optical switching via intraband absorption saturation at 1.55 µm. The transmittance of the TM-polarized light increases with the incident optical power due to the saturation of the s-pz intraband absorption in the QDs. Single-mode waveguides with a ridge width of 2 µm and a length of 1.5 mm display 10 dB absorption saturation of the TM-polarized light for an input pulse energy of 8 pJ and 150 fs. PB Optical Society of America YR 2013 FD 2013-11 LK http://hdl.handle.net/10017/24977 UL http://hdl.handle.net/10017/24977 LA eng NO Ministerio de Economía y Competitividad DS MINDS@UW RD 29-mar-2024