RT info:eu-repo/semantics/article T1 Carrier localization in InN/InGaN multiple-quantum wells with high In-content A1 Valdueza Felip, Sirona A1 Rigutti, Lorenzo A1 Naranjo Vega, Fernando Bernabé A1 Ruterana, Pierre A1 Mangeney, Juliette A1 Julien, François H. A1 González Herráez, Miguel A1 Monroy, Eva K1 Ciencias tecnológicas K1 Electrónica K1 Technology K1 Electronics AB We study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulkInN by means of temperature-dependent photoluminescence and pump-probe measurements at1.55 lm. The S-shaped thermal evolution of the emission energy of the InN film is attributed tocarrier localization at structural defects with an average localization energy of 12 meV. Carrierlocalization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN. PB American Institute of Physics SN 0003-6951 YR 2012 FD 2012-08-10 LK http://hdl.handle.net/10017/24918 UL http://hdl.handle.net/10017/24918 LA eng NO European Commission DS MINDS@UW RD 28-mar-2024