Multilayer microstrip closely-spaced-channel wideband diplexer with highly-selective fourth-order filtering responses
Identifiers
Permanent link (URI): http://hdl.handle.net/10017/51787DOI: 10.1109/TCSII.2022.3173910
ISSN: 1549-7747
Publisher
IEEE
Date
2022-05-09Funders
European Commission
Agencia Estatal de Investigación
Bibliographic citation
Yang, Li & Gómez García, R. 2022, "Multilayer microstrip closely-spaced-channel wideband diplexer with highly-selective fourth-order filtering responses", IEEE Transactions on Circuits and Systems II: Express Briefs, early access, DOI: 10.1109/TCSII.2022.3173910.
Keywords
Bandpass filter (BPF)
Diplexer
Microstrip filter
Multilayer circuit
Multiplexer
RF/microwave circuit
Transmission zero (TZ)
Vertical transition
Wideband circuit
Project
info:eu-repo/grantAgreement/EC/H2020/754382/EU/GOT Energy Talent/GET
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-116983RB-I00/ES/NEW-GENERATION MICROWAVE PASSIVE COMPONENTS FOR ADVANCED WIRELESS-COMMUNICATIONS%2FRF-SENSING PLATFORMS/
Document type
info:eu-repo/semantics/article
Version
info:eu-repo/semantics/acceptedVersion
Publisher's version
https://doi.org/10.1109/TCSII.2022.3173910Rights
Attribution-NonCommercial-NoDerivatives 4.0 Internacional
© 2022 IEEE
Access rights
info:eu-repo/semantics/openAccess
Abstract
A type of multilayer microstrip diplexer with highlyselectivewidebandfiltering
channels is reported. Its closely-spaced
fourth-order passbands are attributed to two circuit parts: (i) two
third-order quasi-elliptic-type microstrip-to-microstrip wideband
vertical transitions and (ii) a shunt two-stub dual-band bandpass
filter (BPF) junction printed on the top layer. The two microstrip
vertical transitions are developed by means of open-/short-circuitended
microstrip lines and slotline stepped-impedance resonators
(SIRs), respectively, and they correspond to the constituent lower
and upper channels. The shunt dual-band BPF junction produces
one additional transmission pole and one more pair of close-topassband
transmission zeros (TZs) for each channel to further
increase their filtering selectivity. The RF theoretical foundations
and design procedure of the engineered broadband diplexer are
detailed. For practical-validation purposes, a proof-of-concept
prototype of two-layer fourth-order microstrip wideband diplexer
is simulated, manufactured, and tested. Its measured lower and
upper channels has two closely-spaced sharp-rejection passbands
with center frequencies of 1.496 GHz and 2.759 GHz and 3-dB
fractional bandwidths of 62.83% and 24.83%, respectively, while
featuring power-isolation levels above 27.39 dB from 0.5 to 4 GHz.
Files in this item
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Multilayer_Yang_IEEE_Trans_Cir ... | 1.461Mb |
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