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dc.contributor.authorMonteagudo Lerma, Laura 
dc.contributor.authorNaranjo Vega, Fernando Bernabé 
dc.contributor.authorJiménez Rodríguez, Marco 
dc.contributor.authorPostigo, P.A.
dc.contributor.authorBarrios, E.
dc.contributor.authorCorredera, Pedro
dc.contributor.authorGonzález Herráez, Miguel 
dc.date.accessioned2018-02-09T14:35:07Z
dc.date.available2018-02-09T14:35:07Z
dc.date.issued2015-09-01
dc.identifier.bibliographicCitationMonteagudo-Lerma, L., Naranjo, F.B., Jiménez-Rodríguez, M., Postigo, P.A., Barrios, E., Corredera, P. & González-Herraéz, M. 2015, “InN-based optical waveguides developed by RF sputtering for all-optical applications at 1.55 μm”, IEEE Photonics Technology Letters, vol. 27, no. 17, pp. 1857-1860es_ES
dc.identifier.issn1041-1135
dc.identifier.urihttp://hdl.handle.net/10017/32165
dc.description.abstractWe report on the design, fabrication, and optical characterization of InN-based optical waveguides aiming at their application as all-optical limiters at 1.55 $\mu \text{m}$. The InN guiding layers are grown by radio frequency (RF) sputtering on sapphire substrates. Experimental cutback method and nonlinear optical transmittance measurements were performed for the developed devices. The waveguides present nonlinear behavior associated with two photon absorption process. A nonlinear absorption coefficient ranging from $\sim 43$ to 114 cm/GW is estimated from optical measurements. These results open the possibility of using RF sputtering as a low cost and thermally harmless technique for the development and overgrowth of InN-based optical waveguides in future III-nitride all-optical integrated circuits working at telecom wavelengthsen
dc.description.sponsorshipMinisterio de Economía y Competitividades_ES
dc.description.sponsorshipComunidad de Madrides_ES
dc.description.sponsorshipUniversidad de Alcaláes_ES
dc.format.mimetypeapplication/pdfen
dc.language.isoengen
dc.publisherIEEEen
dc.rightsAttribution-NonCommercial-NoDerivates 4.0 International (CC BY_NC_ND 4.0)en
dc.rights(c) IEEE, 2015es_ES
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectActive waveguidesen
dc.subjectAll-optical devicesen
dc.subjectIndium nitrideen
dc.subjectNonlinear opticsen
dc.subjectSputteringen
dc.titleInN-based optical waveguides developed by RF sputtering for all-optical applications at 1.55 μmen
dc.typeinfo:eu-repo/semantics/articleen
dc.subject.ecienciaCIENCIAS TECNOLÓGICASes_ES
dc.subject.ecienciaElectrónicaes_ES
dc.subject.ecienciaTECHNOLOGYen
dc.subject.ecienciaElectronicsen
dc.contributor.affiliationUniversidad de Alcalá. Departamento de Electrónicaes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1109/LPT.2015.2443873
dc.type.versioninfo:eu-repo/semantics/acceptedVersionen
dc.identifier.doi10.1109/LPT.2015.2443873
dc.relation.projectIDinfo:eu-repo/grantAgreement/MINECO//TEC2012-37958-C02-01/ES/TECNOLOGIAS DE SEGURIDAD CIVIL BASADAS EN FIBRA OPTICA/en
dc.relation.projectIDinfo:eu-repo/grantAgreement/Comunidad de Madrid//S2009%2FMIT2790/ES/Sensores e INstrumentación en tecnologías FOTÓNicas/SINFOTONen
dc.relation.projectIDinfo:eu-repo/grantAgreement/UAH//CCG2013%2FEXP-052en
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessen
dc.identifier.publicationtitleIEEE Photonics Technology Lettersen
dc.identifier.publicationvolume27
dc.identifier.publicationlastpage1860
dc.identifier.publicationissue17
dc.identifier.publicationfirstpage1857


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