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dc.contributor.authorMonteagudo Lerma, Laura 
dc.contributor.authorNaranjo Vega, Fernando Bernabé 
dc.contributor.authorGonzález Herráez, Miguel 
dc.contributor.authorFernández, S.
dc.date.accessioned2018-02-13T11:36:28Z
dc.date.available2018-02-13T11:36:28Z
dc.date.issued2012-03-22
dc.identifier.bibliographicCitationMonteagudo-Lerma, L., Naranjo, F.B., González-Herráez, M., Fernández, S. Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen (2012) Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 1074-1078.en
dc.identifier.issn1862-6351
dc.identifier.urihttp://hdl.handle.net/10017/32149
dc.description.abstractWe report on the investigation of the influence of deposition conditions on structural, morphological and optical properties of AlN thin films deposited on sapphire (Al 2O 3) substrates by radio-frequency (RF) reactive sputtering. The deposition parameters studied are RF power, substrate temperature and substrate bias, while using pure nitrogen as reactive gas. The effect of such deposition parameters on AlN film properties are analyzed by different characterization methods as high resolution X-ray diffraction (HRXRD), field emission scanning electron microscopy (FESEM) and linear optical transmission. AlN thin films with a full-width at half-maximum (FWHM) of the rocking curve obtained for the (0002) diffraction peak of 1.2 o are achieved under optimized conditions. The time resolved evolution of the self and externally-induced biasing of the substrate during deposition process is monitored and analyzed in terms of the rate of atomic species incorporation into the layer. The bias-induced change of the atomic incorporation leads to an enhancement in the structural quality of the layer and an increase of the deposition rate.en
dc.description.sponsorshipMinisterio de Ciencia e Innovaciónes_ES
dc.description.sponsorshipComunidad de Madrides_ES
dc.format.mimetypeapplication/pdfen
dc.language.isoengen
dc.publisherWiley Online Libraryen
dc.rightsAttribution-NonCommercial-NoDerivates 4.0 International (CC BY-NC-ND 4.0)*
dc.rights(c) Wiley, 2012
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectNitridesen
dc.subjectRF reactive sputteringen
dc.subjectSemiconductor III-V materialsen
dc.subjectX-ray diffractionen
dc.titleInfluence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogenen
dc.typeinfo:eu-repo/semantics/preprinten
dc.subject.ecienciaCIENCIAS TECNOLÓGICASes_ES
dc.subject.ecienciaElectrónicaes_ES
dc.subject.ecienciaTECHNOLOGYen
dc.subject.ecienciaElectronicsen
dc.contributor.affiliationUniversidad de Alcalá. Departamento de Electrónicaes_ES
dc.relation.publisherversionhttp://doi.org/10.1002/pssc.201100196
dc.type.versioninfo:eu-repo/semantics/submittedVersionen
dc.identifier.doi10.1002/pssc.201100196
dc.relation.projectIDinfo:eu-repo/grantAgreement/MICINN//TEC2009-14423-C02-02/ES/Aplicacion Del Laser Femtocomb Al Estudio De Estructuras Semiconductoras Para Comunicaciones Opticas/en
dc.relation.projectIDinfo:eu-repo/grantAgreement/Comunidad de Madrid//S2009%2FESP1781/ES//FACTOTEM2en
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessen
dc.identifier.publicationtitlePhysica Status Solidi (C)en
dc.identifier.publicationvolume9
dc.identifier.publicationlastpage1078
dc.identifier.publicationissue3-4
dc.identifier.publicationfirstpage1074


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