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dc.contributor.authorNúñez Cascajero, Arántzazu 
dc.contributor.authorJiménez Rodríguez, Marco 
dc.contributor.authorMonroy, Eva
dc.contributor.authorGonzález Herráez, Miguel 
dc.contributor.authorNaranjo Vega, Fernando Bernabé 
dc.date.accessioned2017-04-25T12:06:45Z
dc.date.available2017-04-25T12:06:45Z
dc.date.issued2017-01-10
dc.identifier.bibliographicCitationNúñez-Cascajero, A., Jiménez-Rodríguez, M., Monroy, E., González-Herráez, M. and Naranjo, F. B. (2017), Development of AlInN photoconductors deposited by sputtering. Phys. Status Solidi A, 1600780. doi:10.1002/pssa.201600780en
dc.identifier.issn1862-6319
dc.identifier.urihttp://hdl.handle.net/10017/29266
dc.description.abstractIn this work, we have developed photoconductor devices based on Al0.39In0.61N layers grown on sapphire by reac-tive radio-frequency magnetron sputtering. The fabricat-ed devices show a sublinear dependence of the photocur-rent as a function of the incident optical power. The above-the-band-gap responsivity reaches 7 W/A for an ir-radiance of 10 W/m2 (405 nm wavelength). The response decreases smoothly for below-the-bandgap excitation, dropping by more than an order of magnitude at 633 nm. The devices present persistent photoconductivity effects associated to carrier trapping at grain boundaries.en
dc.description.sponsorshipMinisterio de Economía y Competitividades_ES
dc.description.sponsorshipComunidad de Madrides_ES
dc.description.sponsorshipUniversidad de Alcaláes_ES
dc.format.mimetypeapplication/pdfen
dc.language.isoengen
dc.publisherWiley
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectAlInNen
dc.subjectIII-nitride semiconductorsen
dc.subjectPhotoconductorsen
dc.subjectSputteringen
dc.titleDevelopment of AlInN photoconductors deposited by sputteringen
dc.typeinfo:eu-repo/semantics/preprinten
dc.subject.ecienciaCIENCIAS TECNOLÓGICASes_ES
dc.subject.ecienciaElectrónicaes_ES
dc.subject.ecienciaTECHNOLOGYen
dc.subject.ecienciaElectronicsen
dc.contributor.affiliationUniversidad de Alcalá. Departamento de Electrónicaes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1002/pssa.201600780
dc.type.versioninfo:eu-repo/semantics/submittedVersionen
dc.identifier.doi10.1002/pssa.201600780
dc.relation.projectIDinfo:eu-repo/grantAgreement/MINECO//TEC2015-71127-C2-2-R/ES/REDUCCION DE LOS EFECTOS DE RUIDO EN SISTEMAS DE FIBRA OPTICA NO LINEALES/en
dc.relation.projectIDinfo:eu-repo/grantAgreement/Comunidad de Madrid//S2009%2FMIT2790/ES/Sensores e INstrumentación en tecnologías FOTÓNicas/SINFOTONen
dc.relation.projectIDinfo:eu-repo/grantAgreement/UAH//CCG2015%2FEXP-014en
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessen
dc.identifier.publicationtitlePhysica Status Solidi (A)en


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