Development of AlInN photoconductors deposited by sputtering
Authors
Núñez Cascajero, Arántzazu; Jiménez Rodríguez, Marco; Monroy, Eva; González Herráez, Miguel; Naranjo Vega, Fernando BernabéIdentifiers
Permanent link (URI): http://hdl.handle.net/10017/29266DOI: 10.1002/pssa.201600780
ISSN: 1862-6319
Publisher
Wiley
Date
2017-01-10Funders
Ministerio de Economía y Competitividad
Comunidad de Madrid
Universidad de Alcalá
Bibliographic citation
Núñez-Cascajero, A., Jiménez-Rodríguez, M., Monroy, E., González-Herráez, M. and Naranjo, F. B. (2017), Development of AlInN photoconductors deposited by sputtering. Phys. Status Solidi A, 1600780. doi:10.1002/pssa.201600780
Keywords
AlInN
III-nitride semiconductors
Photoconductors
Sputtering
Project
info:eu-repo/grantAgreement/MINECO//TEC2015-71127-C2-2-R/ES/REDUCCION DE LOS EFECTOS DE RUIDO EN SISTEMAS DE FIBRA OPTICA NO LINEALES/
info:eu-repo/grantAgreement/CAM//S2009%2FMIT2790/ES/SENSORES E INSTRUMENTACION EN TECNOLOGIAS FOTONICAS/SINFOTON
info:eu-repo/grantAgreement/UAH//CCG2015%2FEXP-014
Document type
info:eu-repo/semantics/preprint
Version
info:eu-repo/semantics/submittedVersion
Publisher's version
http://dx.doi.org/10.1002/pssa.201600780Rights
Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0)
Access rights
info:eu-repo/semantics/openAccess
Abstract
In this work, we have developed photoconductor devices based on Al0.39In0.61N layers grown on sapphire by reac-tive radio-frequency magnetron sputtering. The fabricat-ed devices show a sublinear dependence of the photocur-rent as a function of the incident optical power. The above-the-band-gap responsivity reaches 7 W/A for an ir-radiance of 10 W/m2 (405 nm wavelength). The response decreases smoothly for below-the-bandgap excitation, dropping by more than an order of magnitude at 633 nm. The devices present persistent photoconductivity effects associated to carrier trapping at grain boundaries.
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