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dc.contributor.authorNúñez Cascajero, Arántzazu 
dc.contributor.authorValdueza Felip, Sirona 
dc.contributor.authorMonteagudo Lerma, Laura 
dc.contributor.authorMonroy, Eva
dc.contributor.authorTaylor-Shaw, E.
dc.contributor.authorMartin, R.W.
dc.contributor.authorGonzález Herráez, Miguel 
dc.contributor.authorNaranjo Vega, Fernando Bernabé 
dc.date.accessioned2017-04-25T06:13:27Z
dc.date.available2017-07-11T02:45:06Z
dc.date.issued2017-01-11
dc.identifier.bibliographicCitationNúñez-Cascajero, A., Valdueza-Felip, S., Monteagudo-Lerma, L., Monroy, E., Taylor-Shaw, E., Martin, R.W., González-Herráez, M., Naranjo, F.B., 2017, "In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers", Journal of Physics D: Applied Physics, 50 (6), art. no. 065101.en
dc.identifier.issn0022-3727
dc.identifier.urihttp://hdl.handle.net/10017/29260
dc.description.abstractThe structural, morphological, electrical and optical properties of In-rich AlxIn1-xN (0 < x < 0.39) layers grown by reactive radio-frequency (RF) sputtering on sapphire are investigated as a function of the deposition parameters. The RF power applied to the aluminum target (0 W-150 W) and substrate temperature (300 °C-550 °C) are varied. X-ray diffraction measurements reveal that all samples have a wurtzite crystallographic structure oriented with the c-axis along the growth direction. The aluminum composition is tuned by changing the power applied to the aluminum target while keeping the power applied to the indium target fixed at 40 W. When increasing the Al content from 0 to 0.39, the room-temperature optical band gap is observed to blue-shift from 1.76 eV to 2.0 eV, strongly influenced by the Burstein-Moss effect. Increasing the substrate temperature, results in an evolution of the morphology from closely-packed columnar to compact. For a substrate temperature of 500 °C and RF power for Al of 150 W, compact Al0.39In0.61N films with a smooth surface (root-mean-square surface roughness below 1 nm) are produced.en
dc.description.sponsorshipEuropean Commissionen
dc.description.sponsorshipMinisterio de Economía y Competitividades_ES
dc.description.sponsorshipComunidad de Madrides_ES
dc.description.sponsorshipUniversidad de Alcaláes_ES
dc.format.mimetypeapplication/pdfen
dc.language.isoengen
dc.publisherIOP
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 Español*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.subjectAlInNen
dc.subjectCharacterizationen
dc.subjectIII-nitridesen
dc.subjectRF-sputteringen
dc.subjectSemiconductoren
dc.titleIn-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layersen
dc.typeinfo:eu-repo/semantics/articleen
dc.subject.ecienciaCIENCIAS TECNOLÓGICASes_ES
dc.subject.ecienciaElectrónicaes_ES
dc.subject.ecienciaTECHNOLOGYen
dc.subject.ecienciaElectronicsen
dc.contributor.affiliationUniversidad de Alcalá. Departamento de Electrónicaes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1088/1361-6463/aa53d5
dc.type.versioninfo:eu-repo/semantics/acceptedVersionen
dc.identifier.doi10.1088/1361-6463/aa53d5
dc.relation.projectIDinfo:eu-repo/grantAgreement/MINECO//TEC2015-71127-C2-2-R/ES/REDUCCION DE LOS EFECTOS DE RUIDO EN SISTEMAS DE FIBRA OPTICA NO LINEALES/en
dc.relation.projectIDinfo:eu-repo/grantAgreement/Comunidad de Madrid//S2009%2FMIT2790/ES/Sensores e INstrumentación en tecnologías FOTÓNicas/SINFOTONen
dc.relation.projectIDinfo:eu-repo/grantAgreement/UAH//CCG2015%2FEXP-014en
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/FP7/331745/EU/Solar cells based on InGaN nanostructures on silicon/Solarinen
dc.date.embargoEndDate2017-07-11
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessen


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