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dc.contributor.authorMonteagudo Lerma, Laura 
dc.contributor.authorNaranjo Vega, Fernando Bernabé 
dc.contributor.authorValdueza Felip, Sirona 
dc.contributor.authorJiménez Rodríguez, Marco 
dc.contributor.authorMonroy, Eva
dc.contributor.authorPostigo, P.A.
dc.contributor.authorCorredera, Pedro
dc.contributor.authorGonzález Herráez, Miguel 
dc.date.accessioned2017-02-06T08:43:58Z
dc.date.available2017-02-06T08:43:58Z
dc.date.issued2016-05-01
dc.identifier.bibliographicCitationPhysica Status Solidi (A) Applications and Materials Science, 213 (5), pp. 1269-1275.
dc.identifier.issn1862-6300
dc.identifier.urihttp://hdl.handle.net/10017/28177
dc.description.abstractWe present an overview of the recently developed III-nitride-based optical waveguides for application in ultrafast signal processing at telecom wavelengths. We focus on different active and passive optical devices for further implementation within all-optical integrated circuits. Optical waveguides based on GaN/AlN quantum dots have been demonstrated to act as saturable absorbers requiring ∼3 pJ of input pulse energy to reach +3 dB transmittance contrast for TM-polarized light. On the contrary, sputtered-InN-based devices show -3 dB transmittance contrast associated to two-photon absorption for input pulse energies of ∼1 pJ, making them suitable to act as highly-efficient reverse saturable absorbers. Finally, the passive optical nature of waveguides based on sputtered AlN at 1.55 μm makes them suitable for further connections between different III-nitride-based active devices. Similar to the development of electronic integrated circuits, photonic integrated circuits are being widely investigated to implement active and passive optical functions in different material platforms. III-nitrides on sapphire substrates emerge as efficient all-optical solutions within the photonic integrated circuit presenting high nonlinear behavior and ultrafast response. These heterostructures make possible the full exploitation of the optical fiber bandwidth which is highly required in today's globalized world. © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipMinisterio de Economía y Competitividades_ES
dc.description.sponsorshipComunidad de Madrides_ES
dc.description.sponsorshipUniversidad de Alcaláes_ES
dc.description.sponsorshipEuropean Commissionen
dc.format.mimetypeapplication/pdfen
dc.language.isoengen
dc.publisherWiley
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.subjectAll-optical signal processingen
dc.subjectIII-nitridesen
dc.subjectNonlinear opticsen
dc.subjectOptical waveguidesen
dc.titleIII-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μmen
dc.typeinfo:eu-repo/semantics/articleen
dc.subject.ecienciaCIENCIAS TECNOLÓGICASes_ES
dc.subject.ecienciaElectrónicaes_ES
dc.subject.ecienciaTECHNOLOGYen
dc.subject.ecienciaElectronicsen
dc.contributor.affiliationUniversidad de Alcalá. Departamento de Electrónicaes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1002/pssa.201532810
dc.type.versioninfo:eu-repo/semantics/acceptedVersionen
dc.identifier.doi10.1002/pssa.201532810
dc.relation.projectIDinfo:eu-repo/grantAgreement/MINECO//TEC2012-37958-C02-01/ES/TECNOLOGIAS DE SEGURIDAD CIVIL BASADAS EN FIBRA OPTICA/en
dc.relation.projectIDinfo:eu-repo/grantAgreement/MINECO//TEC2012-37958-C02-02/ES/TECNOLOGIAS DE FIBRA OPTICA PARA LA SEGURIDAD CIVIL/en
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/FP7/331745/EU/Solar cells based on InGaN nanostructures on silicon/Solarinen
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/FP7/278428/EU/GaN Quantum Devices for T-Ray Sources/TeraGaNen
dc.relation.projectIDinfo:eu-repo/grantAgreement/Comunidad de Madrid//S2009%2FMIT2790/ES/Sensores e INstrumentación en tecnologías FOTÓNicas/SINFOTONen
dc.relation.projectIDS2009/ESP-178 (Comunidad de Madrid)
dc.relation.projectIDinfo:eu-repo/grantAgreement/UAH//CCG2013%2FEXP-052en
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessen


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