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dc.contributor.authorNaranjo Vega, Fernando Bernabé 
dc.contributor.authorKandaswamy, P.K
dc.contributor.authorValdueza Felip, Sirona 
dc.contributor.authorCalvo, V.
dc.contributor.authorGonzález Herráez, Miguel 
dc.contributor.authorMartín López, Sonia 
dc.contributor.authorCorredera, Pedro
dc.contributor.authorMéndez, J.A.
dc.contributor.authorMutta, G.R.
dc.contributor.authorLacroix, Bertrand
dc.contributor.authorRuterana, Pierre
dc.contributor.authorMonroy, Eva
dc.date.accessioned2017-02-01T11:48:52Z
dc.date.available2017-02-01T11:48:52Z
dc.date.issued2011
dc.identifier.bibliographicCitationNaranjo, F.B., Kandaswamy, P.K, Valdueza Felip, S., Calvo, V., González-Herráez, M., Martín-López, S., Corredera, P., Méndez, J.A., Mutta, G.R., Lacroix, B., Monroy, E., "Non-linear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths", Applied Physics Letters, 2011, Vol. 98, n.3
dc.identifier.urihttp://hdl.handle.net/10017/27995
dc.description.abstractWe report on the nonlinear optical absorption of InN/ InxGa1−xN x=0.8, 0.9 multiple-quantum-well structures characterized at 1.55 m by the Z-scan method in order to obtain the effective nonlinear absorption coefficient 2 of the samples at high repetition rate. Saturable absorption is observed for the sample with x=0.9, with an effective 2 −9 103 cm/GW for the studied optical regime. For lower In content in the barrier, reverse saturable absorption is observed, which is attributed to two-photon absorption.en
dc.description.sponsorshipMinisterio de Ciencia e Innovaciónes_ES
dc.description.sponsorshipComunidad de Madrides_ES
dc.format.mimetypeapplication/pdfen
dc.language.isoengen
dc.publisherAmerican Institute of Physicsen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleNon-linear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengthsen
dc.typeinfo:eu-repo/semantics/articleen
dc.subject.ecienciaCiencias tecnológicases_ES
dc.subject.ecienciaElectrónicaes_ES
dc.subject.ecienciaTechnologyen
dc.subject.ecienciaElectronicsen
dc.contributor.affiliationUniversidad de Alcalá. Departamento de Electrónicaes_ES
dc.relation.publisherversionhttp.//dx.doi.org/10.1063/1.3535609
dc.type.versioninfo:eu-repo/semantics/acceptedVersionen
dc.identifier.doi10.1063/1.3535609
dc.relation.projectIDinfo:eu-repo/grantAgreement/MICINN//TEC2009-14423-C02-02/ES/Aplicacion Del Laser Femtocomb Al Estudio De Estructuras Semiconductoras Para Comunicaciones Opticas/en
dc.relation.projectIDinfo:eu-repo/grantAgreement/CAM//S2009%2FESP1781/ES//FACTOTEM2en
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessen


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