Non-linear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

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Authors
Naranjo Vega, Fernando BernabéUniversity of Alcalá Author; Kandaswamy, P.K; Valdueza Felip, SironaUniversity of Alcalá Author; Calvo, V.; González Herráez, MiguelUniversity of Alcalá Author; [et al.]
Identifiers
Permanent link (URI): http://hdl.handle.net/10017/27995
DOI: 10.1063/1.3535609
Publisher
American Institute of Physics
Date
2011
Academic Departments
Universidad de Alcalá. Departamento de Electrónica
Research group
Ingeniería Fotónica
Funders
Ministerio de Ciencia e Innovación
Comunidad de Madrid
Bibliographic citation
Naranjo, F.B., Kandaswamy, P.K, Valdueza Felip, S., Calvo, V., González-Herráez, M., Martín-López, S., Corredera, P., Méndez, J.A., Mutta, G.R., Lacroix, B., Monroy, E., "Non-linear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths", Applied Physics Letters, 2011, Vol. 98, n.3
Project
info:eu-repo/grantAgreement/MICINN//TEC2009-14423-C02-02/ES/Aplicacion Del Laser Femtocomb Al Estudio De Estructuras Semiconductoras Para Comunicaciones Opticas/
info:eu-repo/grantAgreement/CAM//S2009%2FESP1781/ES//FACTOTEM2
Document type
info:eu-repo/semantics/article
Version
info:eu-repo/semantics/acceptedVersion
Publisher's version
http.//dx.doi.org/10.1063/1.3535609
Access rights
info:eu-repo/semantics/openAccess
Abstract
We report on the nonlinear optical absorption of InN/ InxGa1−xN x=0.8, 0.9 multiple-quantum-well structures characterized at 1.55 m by the Z-scan method in order to obtain the effective nonlinear absorption coefficient 2 of the samples at high repetition rate. Saturable absorption is observed for the sample with x=0.9, with an effective 2 −9 103 cm/GW for the studied optical regime. For lower In content in the barrier, reverse saturable absorption is observed, which is attributed to two-photon absorption.

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