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dc.contributor.authorNúñez Cascajero, Arántzazu 
dc.contributor.authorEsteban Martinez, Óscar 
dc.contributor.authorMéndez, J.A.
dc.contributor.authorGonzález Herráez, Miguel 
dc.contributor.authorNaranjo Vega, Fernando Bernabé 
dc.date.accessioned2016-10-13T07:38:36Z
dc.date.available2016-10-13T07:38:36Z
dc.date.issued2016-02
dc.identifier.bibliographicCitationNúñez-Cascajero, Ó. Estébana, J. A. Méndez, M. González-Herráez, F. B. Naranjo. "Infrared SPR sensing with III-nitride dielectric layers" Sensors and Actuators, B: Chemical, 2016, Vol. 223, pp. 768-773
dc.identifier.issn0925-4005
dc.identifier.urihttp://hdl.handle.net/10017/26437
dc.description.abstractIn this work, Aluminum Indium Nitride (AlxIn1-xN) has been used as the dielectric overlay for a surface plasmon resonance sensor. The use of a ternary compound such as AlxIn1-xN for the dielectric allows a fine tuning of its refractive index by varying its composition, thus improving the sensor performance. Narrower transmittance resonances and higher sensitivities are obtained for transducers where the substrate rotates while depositing the ternary compound, which is attributed to the deposition of ternary layers with enhanced homogeneity. The calculated average sensitivity of the devices increases when rising the Al content of the dielectric layer, it being of 4360 nm/RIU, 5230 nm/RIU and 5730 nm/RIU for 0%, 36% and 100%, respectively. The device grown with 36% of Al shows the highest coupling strength. These results show the suitability of AlxIn1-xN compounds as dielectric layers in SPR sensors.en
dc.description.sponsorshipMinisterio de Economía y Competitividades_ES
dc.description.sponsorshipComunidad de Madrides_ES
dc.description.sponsorshipUniversidad de Alcaláes_ES
dc.format.mimetypeapplication/pdfen
dc.language.isoengen
dc.publisherElsevier
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.subjectIII-Nitrideen
dc.subjectSputteringen
dc.subjectSurface plasmon resonanceen
dc.subjectTapered optical fiberen
dc.titleInfrared SPR sensing with III-nitride dielectric layersen
dc.typeinfo:eu-repo/semantics/articleen
dc.subject.ecienciaCIENCIAS TECNOLÓGICASes_ES
dc.subject.ecienciaElectrónicaes_ES
dc.subject.ecienciaTECHNOLOGYen
dc.subject.ecienciaElectronicsen
dc.contributor.affiliationUniversidad de Alcalá. Departamento de Electrónicaes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1016/j.snb.2015.10.020
dc.identifier.doi10.1016/j.snb.2015.10.020
dc.relation.projectIDinfo:eu-repo/grantAgreement/MINECO//TEC2012-37958-C02-01/ES/TECNOLOGIAS DE SEGURIDAD CIVIL BASADAS EN FIBRA OPTICA/en
dc.relation.projectIDinfo:eu-repo/grantAgreement/MINECO//TEC2015-71127-C2-2-R/ES/REDUCCION DE LOS EFECTOS DE RUIDO EN SISTEMAS DE FIBRA OPTICA NO LINEALES/en
dc.relation.projectIDinfo:eu-repo/grantAgreement/Comunidad de Madrid//S2009%2FMIT2790/ES/Sensores e INstrumentación en tecnologías FOTÓNicas/SINFOTONen
dc.relation.projectIDinfo:eu-repo/grantAgreement/UAH//CCG2014%2FEXP-051en
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessen


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