Infrared SPR sensing with III-nitride dielectric layers

Authors
Núñez Cascajero, ArántzazuUniversity of Alcalá Author; Esteban Martinez, ÓscarUniversity of Alcalá Author; Méndez, J.A.; González Herráez, MiguelUniversity of Alcalá Author; Naranjo Vega, Fernando BernabéUniversity of Alcalá Author
Identifiers
Permanent link (URI): http://hdl.handle.net/10017/26437
DOI: 10.1016/j.snb.2015.10.020
ISSN: 0925-4005
Publisher
Elsevier
Date
2016-02
Affiliation
Universidad de Alcalá. Departamento de Electrónica
Funders
Ministerio de Economía y Competitividad
Comunidad de Madrid
Universidad de Alcalá
Bibliographic citation
Núñez-Cascajero, Ó. Estébana, J. A. Méndez, M. González-Herráez, F. B. Naranjo. "Infrared SPR sensing with III-nitride dielectric layers" Sensors and Actuators, B: Chemical, 2016, Vol. 223, pp. 768-773
Keywords
III-Nitride
Sputtering
Surface plasmon resonance
Tapered optical fiber
Project
info:eu-repo/grantAgreement/MINECO//TEC2012-37958-C02-01/ES/TECNOLOGIAS DE SEGURIDAD CIVIL BASADAS EN FIBRA OPTICA/
info:eu-repo/grantAgreement/MINECO//TEC2015-71127-C2-2-R/ES/REDUCCION DE LOS EFECTOS DE RUIDO EN SISTEMAS DE FIBRA OPTICA NO LINEALES/
info:eu-repo/grantAgreement/CAM//S2009%2FMIT2790/ES/Sensores e INstrumentación en tecnologías FOTÓNicas/SINFOTON
info:eu-repo/grantAgreement/UAH//CCG2014%2FEXP-051
Document type
info:eu-repo/semantics/article
Version
info:eu-repo/semantics/acceptedVersion
Publisher's version
http://dx.doi.org/10.1016/j.snb.2015.10.020
Access rights
info:eu-repo/semantics/openAccess
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Abstract
In this work, Aluminum Indium Nitride (AlxIn1-xN) has been used as the dielectric overlay for a surface plasmon resonance sensor. The use of a ternary compound such as AlxIn1-xN for the dielectric allows a fine tuning of its refractive index by varying its composition, thus improving the sensor performance. Narrower transmittance resonances and higher sensitivities are obtained for transducers where the substrate rotates while depositing the ternary compound, which is attributed to the deposition of ternary layers with enhanced homogeneity. The calculated average sensitivity of the devices increases when rising the Al content of the dielectric layer, it being of 4360 nm/RIU, 5230 nm/RIU and 5730 nm/RIU for 0%, 36% and 100%, respectively. The device grown with 36% of Al shows the highest coupling strength. These results show the suitability of AlxIn1-xN compounds as dielectric layers in SPR sensors.
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