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Carrier localization in InN/InGaN multiple-quantum wells with high In-content

dc.contributor.authorValdueza Felip, Sirona 
dc.contributor.authorRigutti, Lorenzo
dc.contributor.authorNaranjo Vega, Fernando Bernabé 
dc.contributor.authorRuterana, Pierre
dc.contributor.authorMangeney, Juliette
dc.contributor.authorJulien, François H.
dc.contributor.authorGonzález Herráez, Miguel 
dc.contributor.authorMonroy, Eva
dc.date.accessioned2016-04-19T12:54:17Z
dc.date.available2016
dc.date.issued2012-08-10
dc.identifier.bibliographicCitationValdueza-Felip, S. and Rigutti, L. and Naranjo, F. B. and Ruterana, P. and Mangeney, J. and Julien, F. H. and González-Herráez, M. and Monroy, E.,"Carrier localization in InN/InGaN multiple-quantum wells with high In-content" Applied Physics Letters, 101, 2012, 062109.
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10017/24918
dc.description.abstractWe study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulk InN by means of temperature-dependent photoluminescence and pump-probe measurements at 1.55 lm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to carrier localization at structural defects with an average localization energy of 12 meV. Carrier localization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN.en
dc.description.sponsorshipEuropean Commissionen
dc.description.sponsorshipMinisterio de Ciencia e Innovaciónes_ES
dc.description.sponsorshipComunidad de Madrides_ES
dc.format.mimetypeapplication/pdfen
dc.language.isoengen
dc.publisherAmerican Institute of Physics
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleCarrier localization in InN/InGaN multiple-quantum wells with high In-contenten
dc.typeinfo:eu-repo/semantics/articleen
dc.subject.ecienciaCiencias tecnológicases_ES
dc.subject.ecienciaElectrónicaes_ES
dc.subject.ecienciaTechnologyen
dc.subject.ecienciaElectronicsen
dc.contributor.affiliationUniversidad de Alcalá. Departamento de Electrónicaes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.4742157
dc.type.versioninfo:eu-repo/semantics/publishedVersionen
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/FP7-ICT/233950/EU/Unipolar Nitride Photonic Device/UNITRIDEen
dc.relation.projectIDinfo:eu-repo/grantAgreement/MICINN//TEC2009-14423-C02-02/ES/Aplicacion Del Laser Femtocomb Al Estudio De Estructuras Semiconductoras Para Comunicaciones Opticas/es_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement///CEA-DSM-Energie NANIPHO Project/ES//en
dc.relation.projectIDinfo:eu-repo/grantAgreement/CAM//S2009%2FESP1781/ES//FACTOTEM2es_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessen


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