Carrier localization in InN/InGaN multiple-quantum wells with high In-content

Authors
Valdueza Felip, SironaUniversity of Alcalá Author; Rigutti, Lorenzo; Naranjo Vega, Fernando BernabéUniversity of Alcalá Author; Ruterana, Pierre; Mangeney, Juliette; [et al.]
Identifiers
Permanent link (URI): http://hdl.handle.net/10017/24918
ISSN: 0003-6951
Publisher
American Institute of Physics
Date
2012-08-10
Affiliation
Universidad de Alcalá. Departamento de Electrónica
Funders
European Commission
Ministerio de Ciencia e Innovación
Comunidad de Madrid
Bibliographic citation
Valdueza-Felip, S. and Rigutti, L. and Naranjo, F. B. and Ruterana, P. and Mangeney, J. and Julien, F. H. and González-Herráez, M. and Monroy, E.,"Carrier localization in InN/InGaN multiple-quantum wells with high In-content" Applied Physics Letters, 101, 2012, 062109.
Project
info:eu-repo/grantAgreement/EC/FP7-ICT/233950/EU/Unipolar Nitride Photonic Device/UNITRIDE
info:eu-repo/grantAgreement/MICINN//TEC2009-14423-C02-02/ES/Aplicacion Del Laser Femtocomb Al Estudio De Estructuras Semiconductoras Para Comunicaciones Opticas/
CEA-DSM-Energie NANIPHO Project
info:eu-repo/grantAgreement/CAM//S2009%2FESP1781/ES//FACTOTEM2
Document type
info:eu-repo/semantics/article
Version
info:eu-repo/semantics/publishedVersion
Publisher's version
http://dx.doi.org/10.1063/1.4742157
Access rights
info:eu-repo/semantics/openAccess
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Abstract
We study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulk InN by means of temperature-dependent photoluminescence and pump-probe measurements at 1.55 lm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to carrier localization at structural defects with an average localization energy of 12 meV. Carrier localization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN.
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