Browsing by Author "Valdueza Felip, Sirona"
Now showing items 1-15 of 15
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Carrier localization in InN/InGaN multiple-quantum wells with high In-content
Valdueza Felip, Sirona; Rigutti, Lorenzo; Naranjo Vega, Fernando Bernabé; Ruterana, Pierre; Mangeney, Juliette; [et al.] (2012-08-10) -
Desarrollo de un sistema de medida de uniformidad de la irradiancia de un simulador solar
Barber Daza, Christopher Lawrence (2023) -
Development of solar cells based on AllnN/Si heterojunctions growth by RF-Sputtering
Blasco Chicano, Rodrigo (2020) -
III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm
Monteagudo Lerma, Laura; Naranjo Vega, Fernando Bernabé; Valdueza Felip, Sirona; Jiménez Rodríguez, Marco; Monroy, Eva; [et al.] (2016-05-01) -
In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers
Núñez Cascajero, Arántzazu; Valdueza Felip, Sirona; Monteagudo Lerma, Laura; Monroy, Eva; Taylor-Shaw, E.; [et al.] (2017-01-11) -
Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells
Valdueza Felip, Sirona; Rigutti, Lorenzo; Naranjo Vega, Fernando Bernabé; Lacroix, Bertrand; Fernández, S.; [et al.] (2012-01) -
Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer
Monteagudo Lerma, Laura; Valdueza Felip, Sirona; Núñez Cascajero, Arántzazu; Ruiz, A.; González Herráez, Miguel; [et al.] (2016-01-16) -
Non linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 μm
Naranjo Vega, Fernando Bernabé; González Herráez, Miguel; Valdueza Felip, Sirona; Fernández, H.; Solis, J.; [et al.] (2009-02-02) -
Non-linear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths
Naranjo Vega, Fernando Bernabé; Kandaswamy, P.K; Valdueza Felip, Sirona; Calvo, V.; González Herráez, Miguel; [et al.] (2011) -
Novel InN/InGaN multiple quantum well structures for slow‐light generation at telecommunication wavelengths
Naranjo Vega, Fernando Bernabé; Kandaswamy, P.K; Valdueza Felip, Sirona; Lahourcade, L.; Calvo, V.; [et al.] (2010-01) -
Novel nitride - Based materials for nonlinear optical signal processing applications at 1.5 μm
Valdueza Felip, Sirona; Naranjo Vega, Fernando Bernabé; González Herráez, Miguel; Fernández, H.; Solis, J.; [et al.] (2008-02-08) -
Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering
Núñez Cascajero, Arántzazu; Valdueza Felip, Sirona; Blasco Chicano, Rodrigo; Mata Fernández, María de la; Molina Rubio, Sergio Ignacio; [et al.] (2018-11-15) -
Study of high In-content AlInN deposition on p-Si (111) by RF-sputtering
Núñez Cascajero, Arántzazu; Monteagudo Lerma, Laura; Valdueza Felip, Sirona; Navío, C.; Monroy, Eva; [et al.] (2016-05) -
Two-step method for the deposition of AlN by radio frequency sputtering
Monteagudo Lerma, Laura; Valdueza Felip, Sirona; González Herráez, Miguel; Monroy, Eva; Núñez Cascajero, Arántzazu; [et al.] (2013-07-31) -
Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs
Monteagudo Lerma, Laura; Valdueza Felip, Sirona; Naranjo Vega, Fernando Bernabé; Corredera, Pedro; Rapenne, L.; [et al.] (2013-11)